双装饰正方晶格上半填充自旋电子模型的常规和旋转磁电效应
Conventional and rotating magnetoelectric effect of a half-filled spin-electron model on a doubly decorated square lattice
摘要：
通过精确计算，研究了双缀饰正方晶格上半填充自旋电子模型的常规磁电效应和旋转磁电效应。详细研究了电子跳跃和电场空间取向对磁电效应的重要性。临界温度可以显示作为电场的函数的一个或两个连续的圆形最大值。虽然旋转磁电效应（RME）不影响基态有序，但在连续相变的临界温度附近发现明显的RME。结果表明，RME被放大后，加强电场，这另外支持热涨落破坏自发反铁磁长程序。
英文摘要：
A conventional and rotating magnetoelectric effect of a half-filled spin-electron model on a doubly decorated square lattice is investigated by exact calculations. An importance of the electron hopping and spatial orientation of the electric field upon a magnetoelectric effect is examined in detail. A critical temperature may display one or two consecutive round maxima as a function of the electric field. Although the rotating magnetoelectric effect (RME) does not affect the ground-state ordering, the pronounced RME is found close to a critical temperature of continuous phase transition. It is shown that RME is amplified upon strengthening of the electric field, which additionally supports thermal fluctuations in destroying a spontaneous antiferromagnetic long-range order.
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