量子反常霍尔绝缘体中耗散准螺旋边输运的证明
Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
摘要：
在拓扑绝缘体（TI）薄膜中掺杂过渡金属离子，可以打破TI薄膜的时间反转对称性，实现量子反常霍尔（QAH）效应。先前的研究表明，当霍尔电阻表现出良好的量化时，QAH样品的纵向电阻通常不会消失。这已被解释为磁TI样品中可能存在耗散传导通道的结果。通过研究温度和磁场对磁性TI三明治异质结构器件磁阻的影响，我们证明了厚QAH绝缘体中的主要耗散机制可以在不同磁场区域内在非手征边缘态和剩余体态之间切换.研究了体态、手征边缘态和非手征边缘态之间的相互作用。我们的研究提供了一种方法来区分所产生的残留体状态和非手性边缘状态，这是实现真正的无耗散QAH绝缘体的运输和提供更深入的了解QAH相关的现象是至关重要的耗散。
英文摘要：
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between non-chiral edge states and residual bulk states in different magnetic field regimes. The interactions between bulk states, chiral edge states, and non-chiral edge states are also investigated. Our study provides a way to distinguish between the dissipation arising from the residual bulk states and non-chiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena.
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