hBN作为二维材料基超尺度CMOS器件绝缘体的适用性
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
摘要：
互补金属氧化物半导体（CMOS）逻辑电路在最终的缩放极限对所涉及的所有材料的性能提出了最高要求。对半导体的要求已经得到了很好的探索，并且可以通过许多层状二维（2D）材料来满足，例如过渡金属二硫属化物或黑磷。对栅极绝缘体的要求可以说更具挑战性，难以满足。特别地，形成金属氧化物半导体场效应晶体管（MOSFET）的中心元件的绝缘体与半导体的组合必须具有优异的质量，以便构建有竞争力的器件。目前，六方氮化硼（hBN）是最常见的二维绝缘体，并且被广泛认为是纳米级二维材料基晶体管中最有前途的栅极绝缘体。在这里，我们严格评估hBN的材料参数，并得出结论，虽然它的属性使hBN在二维纳米电子学中的许多应用的理想候选人，hBN是最有可能不适合作为超尺度CMOS器件的栅极绝缘体。
英文摘要：
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the gate insulator are arguably even more challenging and difficult to meet. In particular the combination of insulator to semiconductor which forms the central element of the metal oxide semiconductor field effect transistor (MOSFET) has to be of superior quality in order to build competitive devices. At the moment, hexagonal boron nitride (hBN) is the most common two-dimensional insulator and widely considered to be the most promising gate insulator in nanoscaled 2D material-based transistors. Here, we critically assess the material parameters of hBN and conclude that while its properties render hBN an ideal candidate for many applications in 2D nanoelectronics, hBN is most likely not suitable as a gate insulator for ultrascaled CMOS devices.
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