动态电子能量损失引起的a-SiNx：H中离子径迹形态的演化
Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss
摘要：
用100 MeV Ni $^{7+}$辐照的非晶氢化氮化硅（$\textit{a}$-SiN $_\mathrm{\textit{x}}$：H）薄膜在较低的$5\times{10^{12}}$离子/cm $^2$的能量密度下导致形成连续的离子轨道结构，而在较高的$1\times{10^{14}}$离子/cm $^2$的能量密度下，轨道结构碎裂成不连续的离子轨道状结构。在$1\times{10^{14}}$ ions/cm $^2$的高能量密度下观察到的不连续离子径迹状结构清楚地表明，较高能量密度的辐照可能并不总是导致在较低能量密度下形成的微结构的溶解。结果是理解的基础上的动态电子能量损失（S $_{e}$）在辐照过程中产生的氢从膜和连续增加的密度的$\textit{a}$ $_\mathrm{\textit{x}}$：H膜的向外扩散。
英文摘要：
Amorphous hydrogenated silicon nitride ($\textit{a}$-SiN$_\mathrm{\textit{x}}$:H) thin films irradiated with 100 MeV Ni$^{7+}$ results in the formation of continuous ion track structures at the lower fluence of $5\times{10^{12}}$ ions/cm$^2$ whereas at higher fluence of $1\times{10^{14}}$ ions/cm$^2$ the track structures fragment into discontinuous ion track like structures . The observation of the discontinuous ion track like structures at the high fluence of $1\times{10^{14}}$ ions/cm$^2$ shows clearly that higher fluence irradiation may not always lead to dissolution of the microstructure formed at lower fluence. The results are understood on the basis of a dynamic electronic energy loss (S$_{e}$) in the course of irradiation resulting from the out-diffusion of hydrogen from the films and a continuous increase in density of $\textit{a}$-SiN$_\mathrm{\textit{x}}$:H films.
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