熔融合金驱动选择区外延生长硅基InP单晶
Monolithic integration of InP on Si by molten alloy driven selective area epitaxial growth
摘要：
我们报告了一种新的方法单片集成的III-V族材料到硅，基于选择性区域生长和驱动的熔融合金在金属有机气相外延。我们的方法包括选择性区域和液滴介导的生长的元素，并结合了这两种技术的优点。使用这种方法，我们获得了有组织的阵列的高结晶质量的InP插入到（100）取向的Si衬底。我们详细的结构，形态和光学研究揭示了导致缺陷形成的条件。然后消除这些条件以优化用于获得直接在Si上生长并埋在顶表面下方的无位错InP纳米结构的工艺。这些结构的PL信号在InP带隙能量处呈现出窄峰。生长的基本方面进行了研究，通过建模的InP成核过程。该模型是由我们的X-射线衍射测量拟合，并与我们的透射电子显微镜和光学调查的结果。我们的方法构成了一种新的方法，单片集成的活性III-V族材料到Si平台，并开辟了新的机会，在有源硅光子学。
英文摘要：
We report a new approach for monolithic integration of III-V materials into silicon, based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy. Our method includes elements of both selective area and droplet-mediated growths and combines the advantages of the two techniques. Using this approach, we obtain organized arrays of high crystalline quality InP insertions into (100) oriented Si substrates. Our detailed structural, morphological and optical studies reveal the conditions leading to defect formation. These conditions are then eliminated to optimize the process for obtaining dislocation-free InP nanostructures grown directly on Si and buried below the top surface. The PL signal from these structures exhibits a narrow peak at the InP bandgap energy. The fundamental aspects of the growth are studied by modeling the InP nucleation process. The model is fitted by our x-ray diffraction measurements and correlates well with the results of our transmission electron microscopy and optical investigations. Our method constitutes a new approach for the monolithic integration of active III-V material into Si platform and opens up new opportunities in active Si photonics.
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