短沟道FinFETs铁电增强静电控制的解析模型
Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs
摘要：
本文利用TCAD模拟了沟道长度为25 ~ 100 nm的负电容双栅FinFET。结果表明，负电容显著降低了亚阈值摆幅和漏致势垒降低效应。发现短沟道器件的改善比长沟道器件显著更突出，这表明负电容栅堆叠对于缩放MOSFET的巨大优势。一个紧凑的分析公式，以量化短沟道器件的亚阈值摆幅改善。
英文摘要：
This study simulated negative-capacitance double gate FinFETs with channel lengths ranging from 25nm to 100nm using TCAD. The results show that negative capacitance significantly reduces subthreshold swing as well as drain induced barrier lowering effects. The improvement is found to be significantly more prominent for short channel devices than long ones, which demonstrates the tremendous advantage of negative capacitance gate stack for scaled MOSFETs. A compact analytical formulation is developed to quantify sub-threshold swing improvement for short channel devices.
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