楔形\textit{c} - GaN薄膜中极化诱导二维约束载流子的自旋输运
Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls
摘要：
从理论上研究了楔形\textit{c}取向GAN纳米壁中心垂直面内极化诱导二维电子气通道的自旋输运性质。由于限制势保持了导带和价带之间的空间对称性，因此即使当楔形形状不对称时，该系统中的Rashba效应也被抑制。已经发现，通过D 'yakonov-Perel'（DP）机制沿着约束方向取向的电子自旋的弛豫，这是在该高迁移率沟道中的主要弛豫过程，在低温下被完全关闭。自旋弛豫可以通过在栅极处施加合适的偏置来开启。利用这种显著的效应，一种新型的全电驱动自旋晶体管已经被提出。
英文摘要：
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric. It has been found that the relaxation of the electron spin oriented along the direction of the confinement via D'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation in this high mobility channel, is entirely switched off at low temperatures. Spin relaxation can be turned on by applying a suitable bias at the gate. Exploiting this remarkable effect, a novel all electrically driven spin-transistor has been proposed.
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