关联驱动的金属-绝缘体跃迁附近电子与声子池的退耦观测
Observation of decoupling of electrons from phonon bath close to a correlation driven metal-insulator transition
摘要：
我们观察到，接近莫特转变，在一个小的温度范围内，缓慢弛豫的优势导致从热浴的电子去耦。这已经通过观察Mott系统$NdNiO_{3}$的膜中的热噪声与接近转变的$4k_{B}TR$的正则Johnson-Nyquist值的大偏差而建立。有人建议，这样一个大的噪音产生的纳米金属相（估计大小$\sim$ 15-20 nm）的绝缘相内的充电能量作为控制参数的小孤立的口袋。
英文摘要：
We observed that close to a Mott transition, over a small temperature range, the predominance of slow relaxations leads to decoupling of electrons from the thermal bath. This has been established by observation of large deviation of the thermal noise in the films of Mott system $NdNiO_{3}$ from the canonical Johnson-Nyquist value of $4k_{B}TR$ close to the transition. It is suggested that such a large noise arise from small isolated pockets of nanometric metallic phases (estimated size $\sim$ 15-20 nm) within the insulating phase with the charging energy as the control parameter.
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