均匀洁净二维过渡金属二硫属化合物的溶解-沉淀生长
Dissolution-Precipitation Growth of Uniform and Clean Two Dimensional Transition Metal Dichalcogenides
摘要：
二维过渡金属二硫属化合物（TMDCs）的研究引起了人们极大的兴趣，并在许多应用领域显示出良好的前景。然而，获得具有清洁表面的均匀TMDC是具有挑战性的，因为在当前化学气相沉积（CVD）生长工艺中难以控制反应物供应到反应的方式。在这里，我们报告了一种新的生长方法，称为溶解-沉淀（DP）生长，其中金属源被密封在玻璃基板内，以控制它们对反应的进料。值得注意的是，玻璃内部的金属源向其表面的扩散在玻璃表面上提供了均匀的金属源，并且将TMDC生长限制为仅表面反应，同时消除了不需要的气相反应。这一特征使得高度均匀的单层TMDC在厘米级基底上具有干净的表面。DP生长适用于各种TMDCs及其合金，为通过精细控制金属源来控制TMDCs的生长提供了坚实的基础。
英文摘要：
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition (CVD) growth process. Here, we report a new growth approach called dissolution-precipitation (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminates unwanted gas-phase reaction. This feature gives rise to highly-uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.
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