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arXiv 2007.05090cond-mat.mtrl-sci
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In Situ Microbeam Surface X-ray Scattering Reveals Alternating Step Kinetics During Crystal Growth

Guangxu Ju, Dongwei Xu, Carol Thompson, Matthew J. Highland, Jeffrey A. Eastman, Weronika Walkosz, Peter Zapol, G. Brian Stephenson

英文摘要:

The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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