Single-photon emitting devices have been identified as an important building block for applications in quantum information and quantum communication. They allow to transduce and collect quantum information over a long distance via photons as so called flying qubits. In addition, substrates like silicon carbide provides an excellent material platform for electronic devices. In this work we combine these two features and show that one can drive single photon emitters within a silicon carbide p-i-n-diode. To achieve this, we specifically designed a lateral oriented diode. We find a variety of new color centers emitting non-classical lights in VIS and NIR range. One type of emitter can be electrically excited, demonstrating that silicon carbide can act as an ideal platform for electrically controllable single photon sources.
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this study, as dielectric material under the anode to significantly reduce the peak electric field at the anode edge of the heterojunction diode such that the observed average breakdown field was higher than 8 MV/cm, achieved for devices with anode to cathode spacing less than 0.2 microns. Control Schottky anode devices (Pt/Al0.58Ga0.42N) fabricated on the same sample…
We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side-facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an anti-parallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of pola…
We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resonance and the resonator's own radio-frequency acoustic drive via optically-detected spin acoustic resonance and observe a narrowing of the spin transition to nearly the linewidth of the driving acoustic…
In this paper, the electrical behavior of tungsten carbide (WC) Schottky barrier on 4H-SiC was investigated. First, a statistical current-voltage (I-V) analysis in forward bias, performed on a set of equivalent diodes, showed a symmetric Gaussian-like distribution of the barrier heights after annealing at 700°C, where a low Schottky barrier height ($Φ$B=1.05 eV) and an ideality factor n=1.06 were measured. The low value of the barrier height makes such a WC contact an interesting candidate to reduce the conduction losses in 4H-SiC Schottky diodes. A deeper characterization has been carried out…
Electrically driven single-photon sources are essential for building compact, scalable and energy-efficient quantum information devices. Recently, color centers in SiC emerged as promising candidates for such nonclassical light sources. However, very little is known about how to control, dynamically tune and switch their single-photon electroluminescence (SPEL), which is required for efficient generation of single photons on demand. Here, we propose and theoretically demonstrate a concept of a gate-tunable single-photon emitting diode, which allows not only to dynamically tune the SPEL rate in…
GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here we demonstrate UHV AlGaN/GaN SBDs on sapphire with a BV of 10.6 kV, a specific on-resistance of 25.8 m…
In this letter, we demonstrate a lateral AlGaN/GaN Schottky barrier diode (SBD) on sapphire substrate with low turn-on voltage (Von) and high breakdown voltage (VBK). By using a double barrier anode (DBA) structure formed by the mixture of Platinum (Pt) and Tantalum (Ta), the Von of the SBD can be as low as 0.36 V with a leakage current of 2.5E-6 A/mm. Supported by the high-quality carbon-doped GaN buffer on sapphire, the VBK can reach more than 10 kV with the anode-to-cathode spacing of 85 μm. Combining the VBK and the specific on-resistance (Ron,sp) of 25.1 mΩ.cm^2, the power figure of merit…
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using …
In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality with a 0.26-nm roughness of the anode recessed surface. By using the high work function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode recess surface and related field plate design, the SBD device with the anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, t…
For nitride-based blue and green light-emitting diodes (LEDs), the forward voltage $V_\text{for}$ is larger than expected, especially for green LEDs. This is mainly due to the large barriers to vertical carrier transport caused by the total polarization discontinuity at multiple quantum well and quantum barrier interfaces. The natural random alloy fluctuation in QWs has proven to be an important factor reducing $V_\text{for}$. However, this does not suffice in the case of green LEDs because of their larger polarization-induced barrier. V-defects have been proposed as another key factor in redu…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we observed the narrower three-terminal Hanle (N-3TH) signals indicating true spin injection into Si, and estimated the spin polarization in Si to be 16% when the thickness of the Mg insertion layer is 1 nm, whereas no N-3TH signal was observed without Mg insertion. This means that the spin injection/extraction efficiency is enhanced by suppressing the formation of …
Light emission and detection are the two fundamental attributes of optoelectronic communication systems. Until now, both functions have been demonstrated using the p-n diode which is exploited across a wide range of applications. However, due to the competing dynamics of carrier injection and photocarrier collection, with this device light emission and detection are realized separately by switching the direction of the applied electrical bias. Here we use mobile ions in halide perovskites to demonstrate light-emitting photodetection in either condition of applied electrical bias. Our device co…
