多晶PbSe中波IR光电探测器中载流子寿命的外部电压控制
Extrinsic Voltage Control of Carrier Lifetime in Polycrystalline PbSe Mid-wave IR Photo Detectors for Increased Detectivity
摘要：
用于中波IR（MWIR）光电探测器的多晶PbSe是一种有吸引力的材料选择，这是由于高操作/环境温度操作以及相对简单和便宜的制造工艺，使其成为低功率和小占地面积应用的候选者，例如物联网（IoT）传感器和由于减少/消除主动冷却要求而在移动平台上的部署。然而，有许多材料的挑战，降低了这些探测器的探测能力。在这项工作中，我们证明，它是可能的，以改善后，通过外部调制导电载流子的寿命，通过施加背栅电压，可以控制所产生的载流子的复合率。我们首先描述的物理$PbSe$探测器，载流子传输的机制，以及长期观察到的导电载流子的寿命。然后，我们讨论了这些反向通道的电压控制，使用背板栅极调制这些载流子的寿命。这种电压控制代表了一种外在的“旋钮”，通过它可以为高性能红外光电探测器的设计开辟一条途径，如本文所示。
英文摘要：
Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractive material option due to high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it candidate for low-power and small footprint applications such as internet-of-thing (IoT) sensors and deployment on mobile platforms due to reduced/removed active cooling requirements. However, there are many material challenges that reduce the detectivity of these detectors. In this work, we demonstrate that it is possible to improve upon this metric by externally modulating the lifetime of conducting carriers by application of a back-gate voltage that can control the recombination rate of generated carrier. We first describe the physics of $PbSe$ detectors, the mechanisms underlying carrier transport, and long observed lifetimes of conducting carriers. We then discuss the voltage control of these inverted channels using a back-plane gate resulting in modulation of the lifetime of these carriers. This voltage control represents and extrinsic "knob" through which it may be possible to open a pathway for design of high performance IR photodetectors, as shown in this work.
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