铁电交换偏压对界面电子态的影响
Ferroelectric Exchange Bias Affects Interfacial Electronic States
摘要：
在极性氧化物界面中，诸如导电性、超导性、磁性、一维导电性和量子霍尔态等现象可以在极性不连续处出现。在这样的界面处结合可控的铁电性可以影响超导性质，并揭示极性氧化物和铁电氧化物之间的相互作用。在这里，我们研究了极性氧化物LaAlO3和铁电Ca掺杂SrTiO3之间的界面，通过电输运结合局部成像的电流与使用扫描超导量子干涉仪（SQUID）。在低温下观察到界面电阻率的异常行为。扫描SQUID地图的电流流动表明，这种行为起源于由极性LaAlO3层引起的本征偏置。我们的数据意味着，结合铁电性的内在偏见约束可能的结构域平铺界面附近。我们建议使用这种固有的偏置作为一种方法的控制和调整的初始状态的铁电材料的极性结构的设计。正常状态和超导状态特性对栅极电压的滞后依赖性可用于多方面可控存储器器件。
英文摘要：
In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and shed light on the mutual effects between the polar oxide and the ferroelectric oxide. Here we study the interface between the polar oxide LaAlO3 and the ferroelectric Ca-doped SrTiO3 by means of electrical transport combined with local imaging of the current flow with the use of scanning Superconducting Quantum Interference Device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO3 layer. Our data imply that the intrinsic bias combined with ferroelectricity constrain the possible structural domain tiling near the interface. We recommend the use of this intrinsic bias as a method of controlling and tuning the initial state of ferroelectric materials by design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.
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