自上而下制造的可重配置FET，具有两个对称和高电流导通状态
Top-down fabricated reconfigurable FET with two symmetric and high-current on-states
摘要：
我们展示了一个自上而下制造的可重构场效应晶体管（RFET）的基础上，可以静电编程的p-和n-配置的硅纳米线。该器件结合了传输特性的高度对称性，两种配置中的高开/关电流比以及与其他自上而下制造的RFFET相比的优异电流密度。两个NiSi 2/Si肖特基结形成在导线内部，并分别被选通。通过重复的SiO2蚀刻和生长序列以及共形TiN沉积来制造窄Ω门控沟道。调整栅极和肖特基接触金属功函数和氧化物引起的肖特基结压应力，以导致在绝对值相同的栅极电压和相同的漏极电压下，p电流仅比n电流高1.6倍。
英文摘要：
We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high on/off current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi2/Si Schottky junctions are formed inside the wire and gated individually. The narrow omega-gated channel is fabricated by a repeated SiO2 etch and growth sequence and a conformal TiN deposition. The gate and Schottky contact metal work functions and the oxide-induced compressive stress to the Schottky junction are adjusted to result in only factor 1.6 higher p- than n-current for in absolute terms identical gate voltages and identical drain voltages.
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