电子传输的普遍标度性：近弹道性和量子龙纳米器件
Universal Scaling of Electron Transmission for Nearly Ballistic and Quantum Dragon Nanodevices
AI总结：
研究通过NEGF方法揭示了金属纳米器件在加入不相关散射后，量子传输呈现两种普遍标度行为，通过微扰理论和计算机模拟验证了其有效性。
摘要：
我们预测，在加入少量不相关散射后，金属纳米器件的量子传输将表现出两种不同的普遍标度 regime。一个纳米器件连接到两个薄的无限均匀导体，非平衡格林函数（NEGF）方法给出了电子传输 T(E) 作为注入电子能量 E 的函数。弹道纳米器件没有散射，对于所有允许电子在导体中传播的 E，T(E)=1。量子龙纳米器件可以有极强的适当相关散射，但仍能保持 T(E)=1 对所有 E。额外的不相关位散射导致 T(E) 中的富兰克共振。通过平均不相关散射，我们利用微扰理论预测了 T_ave(E) 的两种普遍标度 regime。这两种普遍标度 regime 的函数形式取决于器件长度和宽度、能量以及不相关散射的方差。第二种标度 regime，适用于比第一种标度 regime 稍大但不大的不相关散射，其形式也取决于系统的态密度。这两种标度 regime 通过大规模计算机计算被证明是有效的。
英文摘要：
We predict two different universal scaling regimes for the quantum transmission of metallic nanodevices following the addition of a small amount of uncorrelated disorder. A nanodevice is connected to two thin semi-infinite uniform leads, and the Non-Equilibrium Green's Function (NEGF) methodology yields the electron transmission ${\cal T}(E)$ as a function of the injected electron energy $E$. Ballistic nanodevices have no disorder and have ${\cal T}(E)=1$ for all $E$ that allow electron propagation in the leads. Quantum dragon nanodevices can have extremely strong properly correlated disorder, and still have ${\cal T}(E)=1$ for all $E$. Additional uncorrelated site disorder leads to Fano resonances in ${\cal T}(E)$. Averaging over the uncorrelated disorder we predict using perturbation theory two universal scaling regimes for ${\cal T}_{\rm ave}(E)$. The functional form of both universal scaling regimes depend on the device length and width, energy, and variance of the uncorrelated disorder. The second scaling regime, valid for small but somewhat larger uncorrelated disorder than the first scaling regime, also has the form dependent on the density of states of the system. These two scaling regimes are demonstrated to be valid via large scale computer calculations.
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