MeMOSat板上的MOS剂量测定，在轨2.5年后的结果
COTS MOS Dosimetry on the MeMOSat Board, Results After 2.5 Years in Orbit
摘要：
我们提出的结果后，2.5年的总电离剂量（TID）的测量使用金属氧化物半导体（MOS）剂量计的MeMOSat板上完成的位。MeMOSat板于2014年7月19日在由Satellogic开发的BugSat-1“Tita”微型卫星上发射，以留在LEO。作为剂量计，我们使用的p沟道商业现成（COTS）MOS晶体管与栅极氧化层的250纳米。在发射之前，从一组100个器件中选择具有类似漏极电流-电压（I-V）曲线的晶体管子集。研究了（I-V）曲线的温度依赖性，找到了最小温度系数偏置点。然后，使用$^{60}$ Co γ源照射传感器的校准子组，以研究它们对TID的响应，当传感器在没有栅极偏压的情况下被照射时，显示出$\sim$ 75 mV/krad的响应度。此外，监测传感器的辐照后响应，以包括对低剂量率辐照的校正，产生30 mV/krad。研制了一个偏置和读出电路，以便最多能读出4个传感器，在任务的不同时期监测阈值电压。在轨道上运行2.5年后，安装在MeMOSat板上的传感器的阈值电压的V $_\mathrm{T}$偏移约为35 mV，对应于1.2 krad的剂量。
英文摘要：
We present the results after 2.5 years in or-bit of Total Ionizing Dose (TID) measurements done using Metal Oxide Semiconductor (MOS) dosimeters on the MeMOSat board. The MeMOSat board was launched on July 19th 2014 at the BugSat-1 "Tita" microsatellite developed by Satellogic to stay at LEO. We used as dosimeters p-channel Commercial Off The Shelf (COTS) MOS transistors with gate oxides of 250~nm. Before launch, a subset of transistors with similar drain current to voltage (I-V)curves where selected from a group of 100 devices. The temperature dependence of the (I-V) curves was studied to find the minimum temperature coefficient biasing point. Then, a calibration subgroup of sensors was irradiated using a $^{60}$Co gamma source to study their response to TID, showing responsivities of $\sim$75~mV/krad when the sensors are irradiated without gate bias. Also, the post irradiation response of the sensors was monitored, in order to include a correction for low dose rate irradiations, yielding 30~mV/krad. A biasing and reading circuit was developed in order to allow the reading of up to 4 sensors.The threshold voltage was monitored during different periods of the mission. After 2.5 years in orbit,the threshold voltage of the sensor mounted on the MeMOSat Board had a V$_\mathrm{T}$ shift of approximately 35~mV corresponds to a dose of 1.2~krads.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
