ZrSiSe中温度诱导的Lifshitz相变和可能的激子不稳定性
Temperature-Induced Lifshitz Transition and Possible Excitonic Instability in ZrSiSe
摘要：
半导体材料由于其独特的电子结构，如线性色散和费米能级接近节点时态密度消失等，引起了人们极大的兴趣。本文报道了半金属ZrSiSe的温度相关输运和扫描隧道显微镜（STM）测量结果，实验结果和理论分析一致表明，温度诱导ZrSiSe在80和106 K处发生Lifshitz跃迁，导致相同温度下的输运反常。更引人注目的是，我们在低温下的STS谱中观察到费米能级附近的V形凹陷结构，这可以归因于自旋轨道耦合和激子不稳定性的共同作用。我们的观察表明，相关相互作用可能在具有准二维电子结构的ZrSiSe中起着重要的作用。
英文摘要：
The nodal-line semimetals have attracted immense interest due to the unique electronic structures such as the linear dispersion and the vanishing density of states as the Fermi energy approaching the nodes. Here, we report temperature-dependent transport and scanning tunneling microscope (spectroscopy) (STM[S]) measurements on nodal-line semimetal ZrSiSe.Our experimental results and theoretical analyses consistently demonstrate that the temperature induces Lifshitz transitions at 80 and 106 K in ZrSiSe, which results in the transport anomalies at the same temperatures. More strikingly, we observe a V-shaped dip structure around Fermi energy from the STS spectrum at low temperature,which can be attributed to co-effect of the spin-orbit coupling and excitonic instability. Our observations indicate the correlation interaction may play an important role in ZrSiSe, which owns the quasi-two-dimensional electronic structures.
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