Si（100）-2x1-Cl表面局部过饱和状态下的氯嵌入和操控
Chlorine insertion and manipulation on the Si(100)-2x1-Cl surface in the regime of local supersaturation
摘要：
我们利用扫描隧道显微镜在Si（100）-2x1表面的氯单分子层中嵌入并操纵单个氯原子。两个对象被创建-一个Cl原子在两个二聚体行之间的凹槽中，和硅二聚体上的桥键Cl。改变电压极性导致对象相互转换。77 K下物体的各向异性运动由两种不同的扩散机制介导：跳跃和类乌鸦运动。在两个二聚体行之间的凹槽中插入Cl原子导致在第三层Si原子上形成悬挂键。在正样本电压偏置下，第一物体带正电，而第二物体可以是中性的或带负电的，这取决于硅样本掺杂。
英文摘要：
We insert and manipulate a single chlorine atom in chlorine monolayer on a Si(100)-2x1 surface using a scanning tunneling microscope. Two objects were created - a Cl atom in a groove between two dimer rows, and bridge-bonded Cl on a silicon dimer. Changing the voltage polarity leads to conversion of the objects into each other. Anisotropic movement of the objects at 77 K is mediated by two different diffusion mechanisms: hopping and crowdion-like motion. Insertion of a Cl atom in a groove between two dimer rows leads to the formation of a dangling bond on a third-layer Si atom. At positive sample voltage bias, the first object is positively charged, while the second object can be neutral or negatively charged depending on silicon sample doping.
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