半导体表面特性的后光照光电压瞬态
Surface properties of semiconductors from post-illumination photovoltage transient
摘要：
半导体的自由表面通过改变它们的表面电压（表面能带弯曲）对光作出响应。该表面光电压可以使用开尔文探针容易地检测。在光关闭之后对表面光电压的瞬态时间行为进行建模可以用作表征半导体的若干关键电子性质的手段，这些电子性质在许多电子器件应用（诸如晶体管和太阳能电池）中具有根本重要性。在本文中，我们开发了一个模型，这种时间的行为，并用它来表征层和纳米线的几个半导体。我们的结果表明，以前被认为是对数衰减只是近似如此。由于开尔文探针方法的已知有限的频率带宽，大多数先前的基于开尔文探针的方法已被限制于慢响应半导体。我们提出的模型扩展了这一适用范围。
英文摘要：
Free surfaces of semiconductors respond to light by varying their surface voltage (surface band bending). This surface photovoltage may be easily detected using a Kelvin probe. Modeling the transient temporal behavior of the surface photovoltage after the light is turned off may serve as a means to characterize several key electronic properties of the semiconductor, which are of fundamental importance in numerous electronic device applications, such as transistors and solar cells. In this paper, we develop a model for this temporal behavior and use it to characterize layers and nanowires of several semiconductors. Our results suggest that what has previously been considered to be a logarithmic decay is only approximately so. Due to the known limited frequency bandwidth of the Kelvin probe method, most previous Kelvin-probe-based methods have been limited to slow responding semiconductors. The model we propose extends this range of applicability.
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