Ti合金化$α$ $_2$ O $_3$：宽带隙工程的途径
Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
摘要：
利用Ti $_2$ O $_3$和Ga $_2$ O $_3$之间的同构α相和高带隙差，研究了Ti作为$α$-Ga $_2$ O $_3$的带隙调节剂的适用性。薄膜的Ti：Ga $_2$ O $_3$，具有一系列的Ti浓度，通过原子层沉积在蓝宝石衬底上合成，其特征在于，以确定结晶度和带隙如何随该合金的组成而变化。证明了具有高达x~ 5.3%的结晶$α$ -（Ti $_x$ Ga $_{1-x}$）$_2$ O $_3$膜的沉积。在较高的Ti浓度，薄膜变成非晶。在整个结晶膜上实现了在~ 270 meV范围内的带隙的修改，并且对于最大Ti分数（相对于Ga为61%Ti）的膜，观察到从纯$α$ $_2$ O $_3$的带隙的最大变化为~1.1 eV。在低Ti分数下保持晶相的能力，伴随着带隙的显著改变，显示出带隙工程的前景和在光电子器件中应用$α$ $_2$ O $_3$的多功能性的增强.
英文摘要：
The suitability of Ti as a band gap modifier for $α$-Ga$_2$O$_3$ was investigated, taking advantage of the isostructural α-phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline $α$-(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure $α$-Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of $α$-Ga$_2$O$_3$ in optoelectronic devices.
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