用于先进电子封装的极低熔点焊料的高熵合金
A high entropy alloy as very low melting point solder for advanced electronic packaging
摘要：
研究了熔点在80 oC左右的SnBiInZn基高熵合金（HEA）作为低回流焊温度钎料。在100 oC回流10 min后，润湿角约为52 o。界面金属间化合物（IMC）生长动力学被测量为成熟控制，具有约18.0 kJ/mol的低活化能，然而，界面反应速率非常慢，导致形成非常薄的IMC层。低熔点的HEA焊料在先进的电子封装技术中具有潜在的应用前景，特别是在生物医学器件中。
英文摘要：
SnBiInZn based high entropy alloy (HEA) was studied as a low reflow temperature solder with melting point around 80 oC. The wetting angle is about 52o after reflow at 100 oC for 10 min. The interfacial intermetallic compound (IMC) growth kinetics was measured to be ripening-control with a low activation energy about 18.0 kJ/mol, however, the interfacial reaction rate is very slow, leading to the formation of a very thin IMC layer. The low melting point HEA solder has potential applications in advanced electronic packaging technology, especially for bio-medical devices.
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