arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2006.01111cond-mat.mes-hallcond-mat.other
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高阶拓扑瞬子Tunnel振荡

Higher-Order Topological Instanton Tunneling Oscillation

Moon Jip Park, Sunam Jeon, SungBin Lee, Hee Chul Park, Youngkuk Kim

摘要:

提出了一种新的二维高阶拓扑绝缘体中的瞬子干涉效应。角间隧穿由穿过高阶拓扑绝缘体边界的瞬子和反瞬子对组成。瞬子对之间的Berry相位差引起隧穿干涉。这种拓扑效应导致角态之间的能量分裂的门可调谐振荡,其中振荡节点信号的隧穿的完美抑制。我们建议这种现象作为一个独特的功能的拓扑角状态,区分平凡的束缚态。从实验实现的角度出发,我们将扭曲双层石墨烯作为一种有希望的二维高阶拓扑绝缘体。振荡可以很容易地观察到通过传输实验,我们建议。因此,我们的工作提供了一个可行的路线来识别高阶拓扑材料。

英文摘要:

We propose a new type of instanton interference effect in two-dimensional higher-order topological insulators. The intercorner tunneling consists of the instanton and the anti-instanton pairs that travel through the boundary of the higher-order topological insulator. The Berry phase difference between the instanton pairs causes the interference of the tunneling. This topological effect leads to the gate-tunable oscillation of the energy splitting between the corner states, where the oscillatory nodes signal the perfect suppression of the tunneling. We suggest this phenomenon as a unique feature of the topological corner states that differentiate from trivial bound states. In the view of experimental realization, we exemplify twisted bilayer graphene, as a promising candidate of a two-dimensional higher-order topological insulator. The oscillation can be readily observed through the transport experiment that we propose. Thus, our work provides a feasible route to identify higher-order topological materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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