Sn4 +前驱体可通过DMSO解决方案实现12.4%效率的锌黄锡矿太阳能电池，开路电压差低于0.30 V
Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V
摘要：
阻碍锌黄锡矿（CZTSSe）薄膜太阳能电池性能进一步提高的限制因素是大的开路电压差（Voc，def）问题，其为0.345V，目前世界纪录器件的效率为12.6%。本文分别以SnCl_4和SnCl_2_2H_2 O为锡源，研究了二甲基亚砜（DMSO）溶液处理的CZTSSe太阳能电池的Voc、def问题。锡化合物与硫脲和DMSO的不同络合导致从溶液到吸收体材料的不同反应途径，从而导致光伏性能的显著差异。Sn 2+与Tu的配位导致前驱体薄膜中形成SnS和ZnS以及Cu 2S，它们首先转化为硒化物，然后融合成CZTSSe，导致薄膜质量和器件性能变差。该薄膜的最高效率为8.84%，Voc，def为0.391V。Sn ~（4+）与DMSO的配位有利于在前驱体膜中直接形成锌黄锡石CZTS相，在硒化过程中直接转化为CZTSSe，从而得到组成均匀的吸收体和高的器件性能。由Sn ~（4+）溶液处理的吸收体制成的器件的有效面积效率为12.2%，Voc，def为0.344 V。此外，CZTSSe/CdS异质结热处理（JHT）显著提高了Sn ~（4+）器件的性能，但对Sn ~（2+）器件有轻微的负面影响。从Sn 4+溶液中获得了总面积效率为12.4%（有效面积效率为13.6%）和低Voc，def为0.297 V的冠军CZTSSe太阳能电池。我们的研究结果表明，由Sn 4+前体实现的预形成的均匀的锌黄锡矿相是实现高效锌黄锡矿吸收剂材料的关键。这里实现的最低Voc-def和高效率为锌黄锡矿太阳能电池的未来带来了新的曙光。
英文摘要：
The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea and DMSO lead to different reaction pathways from solution to absorber material and thus dramatic difference in photovoltaic performance. The coordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film is 8.84% with a Voc,def of 0.391V. The coordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTS phase in the precursor film which directed converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with active area efficiency 12.2% and a Voc,def of 0.344 V was achieved from Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved Sn4+ device performance but had slightly negative effect on Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active are efficiency 13.6%) and low Voc,def of 0.297 V was achieved from Sn4+ solution. Our results demonstrate the preformed uniform kesterite phase enabled by Sn4+ precursor is the key in achieving highly efficient kesterite absorber material. The lowest Voc-def and high efficiency achieved here shines new light on the future of kesterite solar cell.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
