Band structures and direct-to-indirect bandgap transitions in BAlN and BGaN alloys: a first principle study

英文摘要：

In this work, the energy band structures of BGaN and BAlN alloys are systematically studied through first-principles calculation using HSE hybrid density functional theory by MedeA-VASP. Direct-indirect bandgap transition of BGaN alloys at B content around 44% and that of BAlN alloys at B content about 24% have been identified. The variation of electron and hole effective masses of both materials at different B compositions have also been demonstrated. A large change in hole effective masses of BGaN and BAlN alloys from B=0% to 25% has been observed. Finally, a picture of energy bandgap versus lattice constant of III-nitride family with boron is shown.