基于石墨烯上的CMOS闪存技术的光记忆晶体管及其神经形态应用
Photo memtransistor based on CMOS flash memory technology on Graphene with neuromorphic applications
摘要：
石墨烯在许多不同的未来应用中具有很大的前景，特别是与其通过静电门控容易调节的掺杂和费米能级有关。然而，到目前为止，大多数实施方式依赖于通过施加连续的大电压来维持期望的掺杂的电掺杂。我们在这里展示了如何石墨烯可以实现与传统的半导体闪存技术，以使可编程掺杂成为可能，简单地通过应用短栅极脉冲。我们还演示了这种方法可以用于存储设备，并显示潜在的神经形态的设备的能力。最后，我们表明，整体性能可以显着提高通过照射的设备与紫外线辐射。我们的方法可能为将石墨烯集成到CMOS技术存储器应用中铺平道路，我们的器件设计也适用于大规模神经形态计算结构。
英文摘要：
Graphene holds a great promise for a number of diverse future applications, in particular related to its easily tunable doping and Fermi level by electrostatic gating. However, as of today, most implementations rely on electrical doping via the application of continuous large voltages to maintain the desired doping. We show here how graphene can be implemented with conventional semiconductor flash memory technology in order to make programmable doping possible, simply by the application of short gate pulses. We also demonstrate how this approach can be used for a memory device, and also show potential neuromorphic capabilities of the device. Finally, we show that the overall performance can be significantly enhanced by illuminating the device with UV radiation. Our approach may pave the way for integrating graphene in CMOS technology memory applications, and our device design could also be suitable for large scale neuromorphic computing structures.
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