锑分子中的拓扑量子开关和可控准一维线
Topological quantum switch and controllable quasi 1D wires in antimonene
摘要：
基于最近发现的非平凡的拓扑结构的扣锑，我们提出了一个量化的开关，是由拓扑结构和机制来创建可配置的1D线通道保护的概念设计。我们表明，在这个系统中的拓扑所需的边缘状态可以打开和关闭，通过打破反转对称性（减少对称性从$S_6$到$C_3$），这可以通过门控系统。这表明，以创建一个场效应量子开关投影的拓扑结构。其次，我们表明，通过在不同区域局部选通具有不同极性的系统，在它们的界面处产生类似孤子的畴壁，该畴壁具有受保护的电子态，在该电子态中，可以通过选通掺杂来实现输运。
英文摘要：
Based on the recently found non-trivial topology of buckled antimonene, we propose the conceptual design of a quantized switch that is protected by topology and a mechanism to create configurable 1D wire channels. We show that the topologically required edge states in this system can be turned on and off by breaking the inversion symmetry (reducing the symmetry from $S_6$ to $C_3$), which can be achieved by gating the system. This is shown to create a field-effect quantum switch projected by topology. Secondly we show that by locally gating the system with different polarity in different areas, a soliton-like domain wall is created at their interface, which hosts a protected electronic state, in which transport could be accessed by gated doping.
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