二维铁电体alpha-In2Se3面外场效应的正交电控制
Orthogonal electric control of the out-of-plane field-effect in two-dimensional ferroelectric alpha-In2Se3
摘要：
调整晶体固体的电特性是材料科学和电子学的核心。通过外部电压产生电场效应是一种干净、连续和系统的方法。在这里，利用范德华力（vdW）铁电体alpha-In 2Se 3中独特的电偶极锁定，我们报告了一种建立电门控效应的新方法，其中面外方向的静电掺杂是由诱导和控制的。面内电压。利用垂直垂直vdW异质结的α-In_2Se_3和MoS_2，我们验证了一种具有显著和保持的开/关比的共面电压栅共面场效应晶体管（CP-FET）。我们的研究结果表明，前所未有的电控制的铁电性，这铺平了道路，将二维（2D）铁电集成到新的纳米电子器件具有广泛的应用。
英文摘要：
Tuning the electric properties of crystalline solids is at the heart of material science and electronics. Generating the electric field-effect via an external voltage is a clean, continuous and systematic method. Here, utilizing the unique electric dipole locking in van der Waals (vdW) ferroelectric alpha-In2Se3, we report a new approach to establish the electric gating effect, where the electrostatic doping in the out-of-plane direction is induced and controlled by an in-plane voltage. With the vertical vdW heterostructure of ultrathin alpha-In2Se3 and MoS2, we validate an in-plane voltage gated coplanar field-effect transistor (CP-FET) with distinguished and retentive on/off ratio. Our results demonstrate unprecedented electric control of ferroelectricity, which paves the way for integrating two-dimensional (2D) ferroelectric into novel nanoelectronic devices with broad applications.
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