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arXiv 2005.01680cond-mat.mes-hallphysics.opticsphysics.plasm-ph
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电子开放系统中的等离子体激元阻尼

Plasmon damping in electronically open systems

Kirill Kapralov, Dmitry Svintsov

摘要:

固体中电控等离子体的快速发展提出了一个关于电子库对等离子体性质的影响的问题。我们发现,在电子开放系统中的等离子体激元[即在(半)导体连接到引线]是易于额外的阻尼由于载流子渗透到接触和随后的热化。我们发展了一个理论,这样的铅诱导阻尼的动力学方程与自洽电场的基础上,补充微观载流子输运的接口。电子开放弹道系统中等离子体激元的寿命似乎是有限的,导体长度除以载流子费米(热)速度的数量级。等离子体激元入射到半导体和理想导电金属的接触面上的反射损耗也表现为有限的费米速度除以波相速度的量级。最近的实验等离子体激元辅助光电探测的建议铅诱导阻尼现象进行了讨论。

英文摘要:

Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected to leads] are prone to an additional damping due to charge carrier penetration into contacts and subsequent thermalization. We develop a theory of such lead-induced damping based on kinetic equation with self-consistent electric field, supplemented by microscopic carrier transport at the interfaces. The lifetime of plasmon in electronically open ballistic system appears to be finite, order of conductor length divided by carrier Fermi (thermal) velocity. The reflection loss of plasmon incident on the contact of semi-conductor and perfectly conducting metal also appears to be finite, order of Fermi velocity divided by wave phase velocity. Recent experiments on plasmon-assisted photodetection are discussed in light of the proposed lead-induced damping phenomenon.

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