超净SiGe/Si/SiGe量子阱中输运强关联的表现
Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells
摘要：
我们观察到，在超洁净SiGe/Si/SiGe量子阱中强相互作用的二维电子系统中，金属-绝缘体转变附近的金属侧电阻率随温度的降低而增加，在某一温度下达到最大值，然后减小一个数量级以上.我们缩放的电阻率数据与预期的强相关费米系统的运输，并找到一个几乎完美的协议与理论在很宽的范围内的电子密度。
英文摘要：
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.
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