arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2004.13642cond-mat.str-elcond-mat.mtrl-sci
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磁掺杂Bi $_{0.97-x}$ Sb $_{0.03}$单晶的磁输运和Berry相

Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals

V. K. Maurya, Manju Mishra Patidar, Anita Dhaka, R. Rawat, V. Ganesan, R. S. Dhaka

摘要:

本文报道了磁性掺杂(M= Ni和Fe)的M $_x$ Bi $_{0.97-x}$ Sb $_{0.03}$($x=$ 0,0.02)拓扑绝缘体单晶中的大磁电阻(MR)和Shubnikov-de Haas(SdH)振荡。R $\bar{3}$ m对称性和相已通过X射线衍射数据的Rietveld精修证实。有趣的是,磁场诱导的相变从半金属到半导体类型被发现与80 meV左右的能隙在15特斯拉的$x=$ 0样品。此外,我们观察到线性行为的MR高达15特斯拉的横向模式和SdH振荡的纵向模式的磁场方向是相对于电流和晶面。对于母体样品,用修正的H-L-N方程对横模的磁共振数据进行拟合,得到其相干长度L $_ϕ=$为12.7 nm。用快速傅里叶变换方法和朗道能级(LL)扇形图提取的SdH振荡频率被发现是一致的母体和Ni掺杂样品。所确定的费米表面积被发现在Ni掺杂相比,可能是由于在费米能量的变化的母样品稍大。科勒曲线表明在100 K以下存在单一散射机制。更重要的是,利用LL扇形图的分析揭示了非零Berry相$ϕ_{\rm B}= -$(1 $\pm$ 0.1)$π$,表明母体和Ni掺杂样品在Dirac点附近存在非平凡拓扑态.

英文摘要:

We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH) oscillations in single crystals of magnetically (M= Ni and Fe) doped M$_x$Bi$_{0.97-x}$Sb$_{0.03}$ ($x=$ 0, 0.02) topological insulators. The R$\bar{3}$m symmetry and phase have been confirmed by the Rietveld refinement of x-ray diffraction data. Interestingly, a magnetic field induced phase transition from semi-metallic to semi-conducting type is found with the energy gap around 80 meV at 15 Tesla in the $x=$ 0 sample. Moreover, we observe linear behavior of MR up to 15 Tesla in transverse mode and SdH oscillations in longitudinal mode where the field direction is with respect to the current and crystal plane. For the parent sample, we found the coherence length L$_ϕ=$ 12.7 nm through the fitting of MR data in transverse mode with modified H-L-N equation. The extracted frequencies of SdH oscillations using the fast Fourier transform method and Landau level (LL) fan diagram are found to be consistent for the parent and Ni doped samples. The determined Fermi surface area is found to be slightly larger in Ni doped as compared to the parent sample possibly due to change in the Fermi energy. The Kohler's plot indicates a single scattering mechanism below 100 K. More importantly, the analysis with the help of LL fan diagram reveals the non-zero Berry phase $ϕ_{\rm B}= -$(1$\pm$0.1)$π$, which demonstrates the non-trivial topological states near the Dirac point in the parent and Ni doped samples.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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