Understanding VSiPMT: a comparison with other large area hybrid photodetectors

新一代天体粒子物理探测器：VSiPMT

A new generation photodetector for astroparticle physics: the VSiPMT

VSiPMT（真空硅光电倍增器管）是我们为革命性光子探测器提出的创新设计。其主要思想是用SiPM（G-APD）代替PMT的经典倍增极链，后者充当电子检测器和放大器。其目的是使光电阴极的大灵敏区域与SiPM技术的性能相匹配。VSiPMT具有许多吸引人的功能。特别地，低功耗和优异的光子计数能力。为了证明这一想法的可行性，我们首先测试了一种特殊的非窗口SiPM（MPPC）的电子探测器和电流放大器的性能。由于这一结果，滨松实现了两个VSiPMT工业原型。在这项工作中，我们提出了一个完整的VSiPMT原型表征的结果。

新型概念光电探测器首款1英寸工业原型的全面表征

Full Characterization of the First 1 Inch Industrial Prototype of a New Concept Photodetector

本研究介绍了新型光探测器VSiPMT的设计思路，即采用硅光电倍增管替代传统光电倍增管的打拿极链，同时呈现了滨松光子学制造的1英寸工业原型的全面表征结果，验证了其低功耗、优光子计数等优异性能。

作为下一代深水下中微子望远镜光电探测器原型的QUASAR-370混合光电管

QUASAR-370 hybrid phototube as a prototype of a photodetector for the next generation of deep underwater neutrino telescopes

在本文中，我们表明，QUASAR-370大面积混合光电管的开发和成功地用于一些天体粒子物理实验，其中贝加尔湖深水下中微子实验，可以用作下一代巨型中微子望远镜的光电探测器的原型。

Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O2 Hybrid Rocket Igniter Plume

Owing to its wide (3.4 eV) and direct-tunable band gap, gallium nitride (GaN) is an excellent material platform for UV photodetectors. GaN is also stable in radiation-rich and high-temperature environments, which makes photodetectors fabricated using this material useful for in-situ flame detection and combustion monitoring. In this paper, we use a GaN photodetector to measure ultraviolet (UV) emissions from a hybrid rocket motor igniter plume. The normalized photocurrent-to-dark current ratio (NPDR) is a performance metric which simultaneously captures the two desired characteristics of high …

High Sensitivity Hybrid PbS CQD-TMDC Photodetectors up to 2 $μ$m

Recent approaches to develop infrared photodetectors characterized by high sensitivities, broadband spectral coverage, easy integration with silicon electronics and low cost have been based on hybrid structures of transition metal dichalcogenides (TMDCs) and PbS colloidal quantum dots (CQDs). However, to date, such photodetectors have been reported with high sensitivity up to 1.5 $μ$m. Here we extend the spectral coverage of this technology towards 2 $μ$m demonstrating for the first time compelling performance with responsivities 1400 A/W at 1.8 $μ$m with 1V bias and detectivities as high as $…

High-speed and high-responsivity hybrid silicon/black-phosphorus waveguide photodetectors at 2 μm

Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 μm for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 μm or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 μm by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active re…