二维二硫化钼的缺陷工程
Defect Engineering of Two-dimensional Molybdenum Disulfide
摘要：
二维二硫化钼（MoS2）由于其独特的结构和有趣的性质在电子和光电应用中具有巨大的前景。本征缺陷，如硫空位（SV）的二硫化钼纳米片被发现是有害的器件效率。为了缓解这个问题，使用硫醇对2D MoS2进行官能化已经成为工程缺陷的关键策略之一。在此，我们展示了一种方法，以可控地工程的SV的化学剥离二硫化钼纳米片使用一系列取代的硫酚溶液中。通过改变取代基的吸电子强度，可以调节官能化程度。我们发现，2LA（M）峰的强度归一化到A1g峰强烈相关的官能化程度。我们的研究结果提供了一个光谱指标，以监测和量化的缺陷工程过程。这种在溶液中进行MoS2缺陷功能化的方法也有利于进一步探索无缺陷MoS2的广泛应用。
英文摘要：
Two-dimensional (2D) molybdenum disulfide (MoS2) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS2 nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS2 using thiols has emerged as one of the key strategies for engineering defects. Herein, we demonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS2 nanosheets using a series of substituted thiophenols in solution. The degree of functionalization can be tuned by varying the electron withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A1g peak strongly correlates to the degree of functionalization. Our results provide a spectroscopic indicator to monitor and quantify the defect engineering process. This method of MoS2 defect functionalization in solution also benefits the further exploration of defect free MoS2 for a wide range of applications.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
