费米面嵌套能单独驱动单层二硒化钒的电荷密度波跃迁吗？
Can Fermi surface nesting alone drive the charge-density-wave transition in monolayer vanadium diselenide?
摘要：
我们表明，电荷密度波的形成是可能的，通过一个纯粹的电子机制在单层的过渡金属dichalcogenide 1 T-VSe $_2$。通过对扩展的哈伯德模型的重整化群处理，我们研究了当费米面的截面被调谐到完美嵌套时超导和密度波涨落的竞争。当海森堡交换相互作用与库仑排斥相互作用相当时，我们发现了电荷密度波序区域，而对于纯排斥相互作用，我们发现了$d$波超导电性。我们讨论了晶格振动在增强有效海森堡交换中的可能作用。
英文摘要：
We demonstrate that charge-density-wave formation is possible via a purely electronic mechanism in monolayers of the transition metal dichalcogenide 1T-VSe$_2$. Via a renormalization group treatment of an extended Hubbard model we examine the competition of superconducting and density-wave fluctuations as sections of the Fermi surface are tuned to perfect nesting. We find regions of charge-density-wave order when the Heisenberg exchange interaction is comparable to the Coulomb repulsion, and $d$-wave superconductivity for purely repulsive interactions. We discuss the possible role of lattice vibrations in enhancing the effective Heisenberg exchange.
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