High dynamic range CdTe mixed-mode pixel array detector (MM-PAD) for kilohertz imaging of hard x-rays

Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond th…

研究单垫探测器和混合像素探测器（Si、GaAs、CdTe、CZT）对226Ra和137Cs的响应

Investigating the response of single pad and hybrid pixel detectors (Si, GaAs, CdTe, CZT) for 226Ra and 137Cs

本研究在226Ra和137Cs辐射下，对比了Si、GaAs、CdTe三种半导体材料的像素与单垫探测器的能量分辨率、簇大小及信号幅度对外加电压的依赖特性。

Characterization of 128x128 MM-PAD-2.1 ASIC: A Fast Framing Hard X-Ray Detector with High Dynamic Range

We characterize a new x-ray Mixed-Mode Pixel Array Detector (MM-PAD-2.1) Application Specific Integrated Circuit (ASIC). Using an integrating pixel front-end with dynamic charge removal architecture, the MM-PAD-2.1 ASIC extends the maximum measurable x-ray signal (in 20 keV photon units) to > 10$^{7}$ x-rays/pixel/frame while maintaining a low read noise across the full dynamic range, all while imaging continuously at a frame rate of up to 10 kHz. The in-pixel dynamic charge removal mechanism prevents saturation of the input amplifier and proceeds in parallel with signal integration to achieve…