Second order divergence in the third order DC response of a cold semiconductor

Resonant Rayleigh scattering from quantum phases of cold electrons in semiconductor heterostructures

Resonant Rayleigh scattering of light from electrons confined in gallium arsenide double quantum wells displays significant changes at temperatures that are below one degree Kelvin. The Rayleigh resonance occurs for photon energies that overlap a quantum well exciton and when electron bilayers condense into a quantum-Hall state. Marked changes in Rayleigh scattering intensities that occur in response to application of an in-plane magnetic field indicate that the unexpected temperature dependence is linked to formation of non-uniform electron fluids in a disordered quantum-Hall phase. These res…

Thermalization Effect in semiconductor Si, and metallic silicide NiSi2, CoSi2 by using Non-Adiabatic Molecular Dynamics Approach

Recently, cold source transistor (CSFET) with steep-slope subthreshold swing (SS) < 60 mV/decade has been proposed to overcome Boltzmann tyranny in its ballistic regime. However the scattering, especially by inelastic scattering may lead serious SS degradation through cold carrier thermalization. In this study, the electronic excitation/relaxation dynamic process is investigated theoretically by virtue of the state-of-the-art nonadiabatic molecular dynamics (NAMD) method, i.e., the mixed quantum-classical NAMD. The mixed quantum-classical NAMD considers both carrier decoherence and detailed ba…

超冷温度下半导体量子点介质中的自诱导透明

Self-induced Transparency in a Semiconductor Quantum Dot medium at ultra-cold temperatures

本研究针对半导体量子点介质中脉冲传播的吸收与展宽问题，采用极化子变换技术处理声子相互作用，证实短脉冲可低损耗低展宽传播，发现稳定脉冲面积特性及脉冲分裂现象，为量子通信等领域提供可扩展可控的应用方案。

超冷偶极费米气体中半导体激子的量子模拟

Quantum Simulation of Semiconductor Excitons in Ultracold Dipolar Fermi Gases

受TMD半导体激子物理研究启发，研究冷原子系统中激子类似物形成。通过单组分费米子，预测冷原子激子存在，展示用晶格调制光谱观察及量子气体显微镜绘制波函数的方法，为模拟复杂电子态奠定基础。

Proposal for semiconductor-free negative differential resistance tunnel diode with ultra-high peak-to-valley current ratio

The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR tunnel diode concept that exhibits an ultra-high peak-to-valley current ratio (PVCR) value. Our proposed NDR diode consists of two cold metal electrodes separated by a thin insulating tunnel barrier. The NDR effect stems from the unique electronic band structure of the cold metal electrodes, i.e., the width of the isolated metallic bands around the Fermi level…

Quantum Wigner molecules in semiconductor quantum dots and cold-atom optical traps and their mathematical symmetries

Strong repelling interactions between a few fermions or bosons confined in two-dimensional circular traps lead to particle localization and formation of quantum Wigner molecules (QWMs) possessing definite point-group space symmetries. These point-group symmetries are "hidden" (or emergent), namely they cannot be traced in the circular single-particle densities (SPDs) associated with the exact many-body wave functions, but they are manifested as characteristic signatures in the ro-vibrational spectra. An example, among many, are the few-body QWM states under a high magnetic field or at fast rot…