arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2003.12221cond-mat.mes-hallcond-mat.mtrl-sci
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磁性多层膜中的广义磁电子电路理论和界面自旋弛豫

Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

G. G. Baez Flores, Alexey A. Kovalev, M. van Schilfgaarde, K. D. Belashchenko

摘要:

金属界面的自旋输运是各种自旋电子器件概念的重要组成部分,如巨磁电阻、自旋转移矩和自旋泵。自旋-轨道耦合在许多这样的器件中起着重要的作用。特别地,由于自旋-轨道耦合,自旋电流在界面处被部分吸收。我们发展了一个通用的磁电电路理论,概括了自旋混合电导的概念,占负责自旋翻转散射的各种机制。对于交换相互作用占主导地位的特殊情况,我们给出了自旋混合电导的简单表达式,即负责自旋弛豫的贡献(即,自旋记忆损失)、自旋力矩和自旋进动。自旋记忆损失参数$δ$与自旋翻转透射和反射概率有关。自旋力矩和自旋记忆损失之间没有直接的关系。我们计算了N的自旋翻转散射率|N、F| N、F| F接口使用Landauer-Büttiker方法内的线性muffin-tin轨道方法,并确定值的$δ$使用电路理论。

英文摘要:

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of the spin mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin-memory loss parameter $δ$ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of $δ$ using circuit theory.

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