用于囚禁铍离子量子信息处理的VECSEL系统
VECSEL systems for quantum information processing with trapped beryllium ions
AI总结：
本文展示了产生235 nm和313 nm紫外光的VECSEL系统，分别用于囚禁铍离子的光致电离与激光冷却、量子态制备及高保真量子门实现，拓展了其在原子分子与光学物理中的应用能力。
摘要：
本文展示了两套产生235 nm和313 nm紫外辐射的垂直外腔面发射激光器（VECSEL）系统。这些系统适用于囚禁铍离子的量子信息处理应用。每套系统由紧凑、单频、连续波VECSEL组成，产生高功率近红外光，可在数十纳米范围内调谐。一套系统利用基于GaInAs/GaAs量子阱的增益镜在940 nm处产生2.4 W功率，并转换为54 mW的235 nm光，用于中性铍原子的光致电离。另一套系统采用基于GaInNAs/GaAs量子阱的新型增益镜，通过控制GaAs晶格中的应变实现波长扩展。该系统在1252 nm处产生1.6 W功率，转换为41 mW的313 nm光，用于激光冷却囚禁的$^{9}$Be$^{+}$离子，并实现量子态制备与探测。313 nm系统也适用于实现高保真量子门，更广泛地，我们的结果扩展了VECSEL系统在原子、分子和光学物理应用中的能力。
英文摘要：
Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
