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arXiv 2003.08432physics.app-phcond-mat.mtrl-sci
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石墨烯/铁电-光伏异质结中的光存储器

Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure

D. Kundys, A. Cascales, A. S. Makhort, H. Majjad, F. Chevrier, B. Doudin, A. Fedrizzi, B. Kundys

摘要:

实现逻辑元件的光学操作,特别是那些涉及2D层的逻辑元件,可以打开长期寻求的光学计算时代。然而,包括记忆效应的2D材料的电子性质的有效光调制目前缺失。在这里,我们报告了一个完全光学控制的石墨烯的导电性与写入/擦除选项,但在超低的光通量。铁电光伏衬底中的光致电荷产生与随后的弛豫过程之间的竞争提供了影响2D覆盖层掺杂的选择性光生载流子捕获控制。这些发现为全光调制器和各种全光逻辑电路、存储器和场效应晶体管的2D器件的光子控制开辟了道路。

英文摘要:

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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