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arXiv 2003.07213cond-mat.str-elcond-mat.mtrl-sci
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HfTe5量子极限中的非常规霍尔响应

Unconventional Hall response in the quantum limit of HfTe5

S. Galeski, X. Zhao, R. Wawrzyńczak, T. Meng, T. Förster, P. M. Lozano, S. Honnali, N. Lamba, T. Ehmcke, A. Markou, Q. Li, G. Gu, W. Zhu, J. Wosnitza, C. Felser… 展开作者

S. Galeski, X. Zhao, R. Wawrzyńczak, T. Meng, T. Förster, P. M. Lozano, S. Honnali, N. Lamba, T. Ehmcke, A. Markou, Q. Li, G. Gu, W. Zhu, J. Wosnitza, C. Felser, G. F. Chen, J. Gooth

AI总结:

本文报道在三维半金属HfTe5量子极限中观测到非常规霍尔响应,其霍尔电导额外平台幅度为三维量子霍尔效应最后平台的3/5,并伴随Shubnikov-de Haas极小值,表明强电子-电子相互作用稳定了该非常规霍尔效应。

摘要:

在强磁场中被限制在最低朗道能级的相互作用电子可以形成多种关联态,其中一些态会通过霍尔效应表现出来。尽管理论预测这类态可能出现在三维半金属中,但相应的霍尔响应此前尚未在实验中被观测到。本文报道了在体相半金属HfTe5的量子极限中观测到的一种非常规霍尔响应,该响应紧邻低磁场下单电子能带的三维量子霍尔效应。最低朗道能级的霍尔电导中出现的额外类平台特征伴随着纵向电阻率中的Shubnikov-de Haas极小值,其幅度与三维量子霍尔效应最后一个平台高度的关系为3/5。我们的发现与强电子-电子相互作用一致,表明在量子极限下的三维材料中稳定存在一种非常规的霍尔效应变体。

英文摘要:

Interacting electrons confined to their lowest Landau level in a high magnetic field can form a variety of correlated states, some of which manifest themselves in a Hall effect. Although such states have been predicted to occur in three dimensional semimetals, a corresponding Hall response has not yet been experimentally observed. Here, we report the observation of an unconventional Hall response in the quantum limit of the bulk semimetal HfTe5, adjacent to the three-dimensional quantum Hall effect of a single electron band at low magnetic fields. The additional plateau-like feature in the Hall conductivity of the lowest Landau level is accompanied by a Shubnikov-de Haas minimum in the longitudinal electrical resistivity and its magnitude relates as 3/5 to the height of the last plateau of the three-dimensional quantum Hall effect. Our findings are consistent with strong electron-electron interactions, stabilizing an unconventional variant of the Hall effect in a three-dimensional material in the quantum limit.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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