用于可编程逻辑和存储器内计算的互补横向自旋轨道构建块
Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing
摘要：
基于自旋轨道转矩的非易失性自旋电子材料和器件的电流驱动开关为未来的信息处理应用提供了快速的数据处理速度、低功耗和无限的耐久性。类似于传统的CMOS技术，重要的是开发一对互补的自旋轨道器件，其具有作为实现复杂逻辑功能的基本构建块的差异化磁化切换感测。已经提出了使用外部磁场或复杂叠层/电路设计的各种尝试，然而，仍然强烈期望更简单和更可行的方法。在这里，我们表明，一对两个局部激光退火的垂直的Pt/Co/Pt设备与相反的激光轨道配置，从而反向无场横向自旋轨道转矩（LSOTs）诱导开关的意义，可以采用这种互补的自旋轨道积木。通过对每个样品的初始磁化状态（自旋向下/向上）进行电编程，获得了AND、OR、NAND和NOR四个布尔逻辑门以及包含XOR门的自旋轨道半加法器。此外，各种初始化的自由，工作电流强度可编程的状态逻辑操作，包括材料蕴涵（IMP）门，也被证明作为一个逻辑输入的磁化状态。我们的互补LSOT构建块为未来高效的自旋逻辑和内存计算架构提供了一种适用的方式。
英文摘要：
Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
