Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films

Electronic correlations in the semiconducting half-Heusler compound FeVSb

Electronic correlations are crucial to the low energy physics of metallic systems with localized $d$ and $f$ states; however, their effect on band insulators and semiconductors is typically negligible. Here, we measure the electronic structure of the half-Heusler compound FeVSb, a band insulator with filled shell configuration of 18 valence electrons per formula unit ($s^2 p^6 d^{10}$). Angle-resolved photoemission spectroscopy (ARPES) reveals a mass renormalization of $m^{*}/m_{bare}= 1.4$, where $m^{*}$ is the measured effective mass and $m_{bare}$ is the mass from density functional theory …

First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler

In this work, we have studied the electronic structure of a promising thermoelectric half-Heusler FeVSb using FP-LAPW method and SCAN meta-GGA including spin-orbit coupling. Using the obtained electronic structure and transport calculations we try to address the experimental Seebeck coefficient $S$ of FeVSb samples. The good agreement between the experimental and calculated $S$ suggests the band gap could be $\sim$0.7 eV. This is supported by the obtained mBJ band gap of $\sim$0.7 eV. Further, we study and report the phonon dispersion, density of states and thermodynamic properties. The effect…

Fe掺杂FeVSb及 epitaxial Fe/FeVSb纳米复合膜的结构与磁性

Structure and magnetism in Fe-doped FeVSb and epitaxial Fe/FeVSb nanocomposite films

Fe掺杂FeVSb及epitaxial Fe/FeVSb纳米复合膜的结构与磁性研究，发现弱铁磁性和铁磁性纳米结构的形成及界面诱导磁性。

Theoretical study of the structural stability, electronic and magnetic properties of XVSb (X $=$ Fe, Ni, and Co) half-Heusler compounds

The structural, electronic and magnetic properties of half-Heusler compounds XVSb (X $=$ Fe, Co and Ni) are investigated by using the density functional theory with generalized gradient approximation (GGA), and Tran-Blaha modified Becke-Johnson (TB-mBJ) exchange potential approximation. It is found that the half-metallic gaps are generally reasonably widened by mBJ as compared to the GGA approximation. The magnetic proprieties of XVSb (X $=$ Fe, Co and Ni) are well defined within mBJ with an exact integer value of magnetic moment. The band gaps given by TB-mBJ are in good agreement with the av…

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Half-Heusler compounds with 18 valence electrons per unit cell are well-known non-magnetic semiconductors. Employing first-principles electronic band structure calculations, we study the interface properties of the half-Heusler heterojunctions based on FeVSb, CoTiSb, CoVSn, and NiTiSn compounds, which belong to this category of materials. Our results show that several of these heterojunction interfaces become not only metallic but also magnetic. The emergence of spin-polarization is accompanied by the formation of two-dimensional electron gas (2DEG) or hole gas (2DHG) at the interface. We qual…

Electronic structure and magnetism in doped semiconducting half-Heusler compounds

We have studied in details the electronic structure and magnetism in M (Mn and Cr) doped semiconducting half-Heusler compounds FeVSb, CoTiSb and NiTiSn (XM$_{x}$Y$_{1-x}$Z) in a wide concentration range using local-spin density functional method in the framework of tight-binding linearized muffin tin orbital method(TB-LMTO) and supercell approach. Our calculations indicate that some of these compounds are not only ferromagnetic but also half-metallic and may be useful for spintronics applications. The electronic structure of the doped systems is analyzed with the aid of a simple model where we…