arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2003.05077cond-mat.mes-hall
收藏

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

L. H. Willems van Beveren, D. L. Creedon, N. Eikenberg, K. Ganesan, B. C. Johnson, G. Chimowa, D. Churochkin, S. Bhattacharyya, S. Prawer

英文摘要:

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑