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arXiv 2003.03418quant-ph
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声学驱动金刚石氮空位中心的单量子自旋跃迁

Acoustically driving the single quantum spin transition of diamond nitrogen-vacancy centers

H. Y. Chen, S. A. Bhave, G. D. Fuchs

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9 pages, 2-column format
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摘要：

利用高品质因数的3 GHz体声波谐振器器件，我们演示了声驱动金刚石NV中心的单量子自旋跃迁（$\left|m_{s}=0\right>\leftrightarrow\left|\pm1\right>$），并表征了相应的应力敏感性。一个关键的挑战是将器件电流产生的无意磁驱动场与器件内的有意应力驱动分开。我们量化这些驱动领域独立使用拉比光谱之前，研究更复杂的情况下，两者都是共振与单量子自旋跃迁。通过建立一个等效电路模型来描述设备的电流和机械动力学，我们定量模拟实验，以建立它们的相对贡献，并与我们的结果进行比较。我们发现NV中心自旋单量子跃迁的应力敏感性约为双量子跃迁的$\sqrt{2}(0.5\pm0.2)$倍（$\left|+1\right>\leftrightarrow\left|-1\right>$）。虽然双量子基中的声学驱动对于量子增强感测应用是有价值的，但是双量子驱动缺乏操纵NV中心自旋脱离$\left|m_{s}=0\right>$初始化状态的能力。我们的研究结果表明，有效的全声学量子控制NV中心是可能的，是特别有前途的传感应用，受益于紧凑的足迹和位置选择性的声学设备。

英文摘要：

Using a high quality factor 3 GHz bulk acoustic wave resonator device, we demonstrate the acoustically driven single quantum spin transition ($\left|m_{s}=0\right>\leftrightarrow\left|\pm1\right>$) for diamond NV centers and characterize the corresponding stress susceptibility. A key challenge is to disentangle the unintentional magnetic driving field generated by device current from the intentional stress driving within the device. We quantify these driving fields independently using Rabi spectroscopy before studying the more complicated case in which both are resonant with the single quantum spin transition. By building an equivalent circuit model to describe the device's current and mechanical dynamics, we quantitatively model the experiment to establish their relative contributions and compare with our results. We find that the stress susceptibility of the NV center spin single quantum transition is around $\sqrt{2}(0.5\pm0.2)$ times that for double quantum transition ($\left|+1\right>\leftrightarrow\left|-1\right>$). Although acoustic driving in the double quantum basis is valuable for quantum-enhanced sensing applications, double quantum driving lacks the ability to manipulate NV center spins out of the $\left|m_{s}=0\right>$ initialization state. Our results demonstrate that efficient all-acoustic quantum control over NV centers is possible, and is especially promising for sensing applications that benefit from the compact footprint and location selectivity of acoustic devices.

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