InSe: a two-dimensional semiconductor with superior flexibility

Designing inorganic semiconductors with cold-rolling processability

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronics applications. It was recently reported that a few single-crystalline two-dimensional van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here we demonstrate that intralayer fracture toughness can be tailored via compositional design …

基于新型二维单层半导体Bi₂O₂Se、InSe和MoSi₂N₄的晶体管用于增强逻辑密度缩放

Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling

本研究针对逻辑密度缩放的需求，筛选出InSe、Bi₂O₂Se、MoSi₂N₄三种适用于1 nm栅长晶体管的二维半导体，通过第一性原理结合自洽弹道量子输运模型模拟，明确了各材料的器件性能优势，验证了12 nm沟道下的应用可行性。

二维铁电半导体 α-In₂Se₃ 中的体光伏效应

Bulk photovoltaic effect in two-dimensional ferroelectric semiconductor $α$-In$_2$Se$_3$

本文实验验证二维铁电半导体 α-In₂Se₃ 中由面外极化退极化场驱动的体光伏效应，其窄带隙使可见光响应增强，光电流密度较传统体相铁电材料高近两个数量级。

Wafer-scale growth of two-dimensional, phase-pure InSe

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers.…

Van Der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells and Superlattices

Bandgap engineering and quantum confinement in semiconductor heterostructures provide the means to fine-tune material response to electromagnetic fields and light in a wide range of the spectrum. Nonetheless, forming semiconductor heterostructures on lattice-mismatched substrates has been a challenge for several decades, leading to restrictions for device integration and the lack of efficient devices in important wavelength bands. Here, we show that the van der Waals epitaxy of two-dimensional (2D) GaSe and InSe heterostructures occur on substrates with substantially different lattice paramete…

InSe基单层的散热与热电性能：一项Monte Carlo模拟研究

Heat Dissipation and Thermoelectric Performance of InSe-Based Monolayers: A Monte Carlo Simulation Study

本文通过非平衡Monte Carlo模拟比较五种铟基二维单层的瞬态传热与热电性能，表明应变InSe利于散热，而Janus In$_2$SeTe具有更优热电品质因数。