准二维电荷密度波1 TaS2器件中的电流振荡：“窄带噪声”概念的再探讨
Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
摘要：
本文报道了准二维（2D）1 T-TaS 2电荷密度波器件中的电流振荡现象。振荡的MHz频率范围和振荡频率对电流的线性依赖关系非常类似于“窄带噪声”，这在经典的块状准一维（1D）三硫属化物电荷密度波材料中经常观察到。在大块准一维材料中，“窄带噪声”被解释为电荷密度波滑动的直接证据。尽管有相似之处，我们认为，在准二维1 T-TaS 2的MHz振荡的性质是不同的“窄带噪声。“对偏置条件和电流的分析表明，所观察到的振荡与电流不稳定性有关，这是由于电压引起的从几乎相称的电荷密度波相位到不相称的电荷密度波相位的转变。
英文摘要：
We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the "narrow band noise" was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the "narrow band noise." Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.
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