VAT：多级键值存储的渐近成本分析
VAT: Asymptotic Cost Analysis for Multi-Level Key-Value Stores
摘要：
在过去的几年里，有越来越多的键值（KV）存储设计，每一个优化一组不同的要求。此外，随着存储技术的进步，KV商店的设计空间变得更加复杂。最近的KV存储设计目标是快速存储设备，例如SSD和NVM。这些设计中的大多数旨在通过利用器件特性来减少数据重组期间的放大。然而，到目前为止，对KV悬挂物设计的大多数分析都是试验性的，并且仅限于特定的设计点。这使得很难比较不同设计之间的折衷，找到最佳配置并指导未来的KV商店设计。在本文中，我们介绍了可变放大-放热分析（VAT）来计算插入路径放大及其对多级KV存储器性能的影响。我们使用VAT来表达几个现有设计点的行为，并探索不可能或不容易通过实验测量的权衡。VAT表明，通过在插入路径中插入随机性，KV存储可以将快速存储设备的放大率降低10倍以上。键值分离和分层压缩等技术分别将放大率降低了10倍和5倍。此外，VAT预测，设备技术向NVM的发展，减少了使用键值分离和分层的好处。
英文摘要：
Over the past years, there has been an increasing number of key-value (KV) store designs, each optimizing for a different set of requirements. Furthermore, with the advancements of storage technology the design space of KV stores has become even more complex. More recent KV-store designs target fast storage devices, such as SSDs and NVM. Most of these designs aim to reduce amplification during data reorganization by taking advantage of device characteristics. However, until today most analysis of KV-store designs is experimental and limited to specific design points. This makes it difficult to compare tradeoffs across different designs, find optimal configurations and guide future KV-store design. In this paper, we introduce the Variable Amplification- Throughput analysis (VAT) to calculate insert-path amplification and its impact on multi-level KV-store performance.We use VAT to express the behavior of several existing design points and to explore tradeoffs that are not possible or easy to measure experimentally. VAT indicates that by inserting randomness in the insert-path, KV stores can reduce amplification by more than 10x for fast storage devices. Techniques, such as key-value separation and tiering compaction, reduce amplification by 10x and 5x, respectively. Additionally, VAT predicts that the advancements in device technology towards NVM, reduces the benefits from both using key-value separation and tiering.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
