外延石墨烯纳米带中的非侵入式纳米级电位测量与弹道输运
Non-invasive nanoscale potentiometry and ballistic transport in epigraphene nanoribbons
AI总结：
提出一种高分辨率混合扫描探针技术，以 nm 和 $μ$V 分辨率绘制 epigraphene 纳米带的局部电阻与电化学势，揭示了其在室温环境下的微米级弹道输运现象。
摘要：
近期在二维材料中观察到的非经典电子输运区域，亟需新的高分辨率非侵入式技术来局部探测电子特性。我们引入了一种新型混合扫描探针技术，以 nm 和 $μ$V 分辨率绘制局部电阻和电化学势图，并将其应用于研究在 SiC 衬底台阶侧壁上生长的 epigraphene 纳米带。值得注意的是，沿纳米带的电势降并不均匀，且 $μ$m 长的片段未显示出随距离的电势变化。电势图与局部电阻的测量结果高度吻合。这揭示了在环境条件下的弹道输运，与微米级室温电子平均自由程相容。
英文摘要：
The recent observation of non-classical electron transport regimes in two-dimensional materials has called for new high-resolution non-invasive techniques to locally probe electronic properties. We introduce a novel hybrid scanning probe technique to map the local resistance and electrochemical potential with nm- and $μ$V resolution, and we apply it to study epigraphene nanoribbons grown on the sidewalls of SiC substrate steps. Remarkably, the potential drop is non uniform along the ribbons, and $μ$m-long segments show no potential variation with distance. The potential maps are in excellent agreement with measurements of the local resistance. This reveals ballistic transport in ambient condition, compatible with micrometer-long room-temperature electronic mean free paths.
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