Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

具有无掺杂倍增区的黑硅雪崩光电二极管实现超过98%的外量子效率

Black silicon avalanche photodiode with dopant-free multiplication region achieves >98% EQE

本研究通过黑硅纳米结构与Al2O3诱导载流子收集，在倒台面APD中实现无掺杂倍增区，使EQE在紫外波段超过100%，并能探测每个单光子。

体AlN衬底上具有分布式极化掺杂p型AlGaN层的超宽禁带半导体异质结p-n二极管

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

本研究在体AlN衬底上制备出含分布式极化掺杂p型AlGaN层的超宽禁带异质结p-n二极管，测得优异电学与光学特性，验证了极化掺杂的有效性，为高温、恶劣环境下的电力电子及深紫外光子学应用提供了器件基础。

光谱响应截止波长为2.14 μm的Si基Ge0.95Sn0.05雪崩光电二极管

Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer

提出一种Si基GeSn SACM雪崩光电二极管，利用Ge缓冲层缓解失配并输运电子，实现超过2.1 μm的室温截止和最高3.44的增益。

接枝Si/GaAsSb异质结的结构与电学特性

Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction

针对硅基雪崩光电二极管难以探测1.55μm短波红外光的问题，本研究采用接枝技术制备带ALD-Al2O3界面层的p+Si/n-GaAsSb异质结，具备优异界面质量、理想整流特性与II型能带排列，为高带宽SWIR APD技术提供了新可能。

基于氨分子束外延（NH3-MBE）的kV级横向NiOx/GaN超异质结二极管

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

本文报道了利用溅射NiOx与p-GaN/n-GaN实现电荷平衡的横向超异质结二极管，通过NH3-MBE制备，击穿电压达约2.8 kV，较参考结构平均提升约6倍，验证了GaN超结效应。

SnO/$β$-Ga2O3 vertical $pn$ heterojunction diodes

Vertical $pn$ heterojunction diodes were prepared by plasma-assisted molecular beam epitaxy of unintentionally-doped $p$-type SnO layers with hole concentrations ranging from $p=10^{18}$ to $10^{19}$cm$^{-3}$ on unintentionally-doped $n$-type $β$-Ga$_{2}$O$_{3}$(-201) substrates with an electron concentration of $n=2.0\times10^{17}$cm$^{-3}$. The SnO layers consist of (001)-oriented grains without in-plane expitaxial relation to the substrate. After subsequent contact processing and mesa etching (which drastically reduced the reverse current spreading in the SnO layer and associated high leaka…

Recent Progress and Future Prospects of 2D-based Photodetectors

Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and CMOS-incompatibility. New emerging 2D materials such as graphene, TMDs and their hybrid systems thereof, however, can circumvent all these issues benefitting from mechanically flexibility, extraordinary electronic and optical properties, as well as wafer-scale production and integration. Heterojunction-based photodiodes based on 2D materials offer ultrafast and broadband…

Cr2O3/η-氧化镓异质结二极管具有方向依赖性的击穿电场高达12.9 MV/cm

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Cr2O3/η-氧化镓异质结二极管通过反应磁溅射制备，展现方向依赖性击穿电场高达12.9 MV/cm，验证了低对称单斜η-氧化镓中平行平面结电场的方向依赖性。

n型Al$_x$In$_y$Ga$_{1-x-y}$P中深能级缺陷的光学表征以开发固态光电倍增管模拟器

Optical characterization of deep level defects in n-type Al$_x$In$_y$Ga$_{1-x-y}$P for development of solid-state photomultiplier analogs

本研究通过电容测量表征n型Al$_x$In$_y$Ga$_{1-x-y}$P中深能级缺陷，发现铝的引入增加陷阱密度但降低空穴捕获截面，可能抑制暗电流，为开发宽带隙硅光电倍增管模拟器提供材料基础。