Non-isothermal Scharfetter-Gummel scheme for electro-thermal transport simulation in degenerate semiconductors

Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient

Many challenges faced in today's semiconductor devices are related to self-heating phenomena. The optimization of device designs can be assisted by numerical simulations using the non-isothermal drift-diffusion system, where the magnitude of the thermoelectric cross effects is controlled by the Seebeck coefficient. We show that the model equations take a remarkably simple form when assuming the so-called Kelvin formula for the Seebeck coefficient. The corresponding heat generation rate involves exactly the three classically known self-heating effects, namely Joule, recombination and Thomson-Pe…

一种用于现代太阳能电池模拟的稳定高阶时间推进方案

A Stable, High-Order Time-Stepping Scheme for the Drift-Diffusion Model in Modern Solar Cell Simulation

本文提出一种高阶时间推进方案，用于高精度模拟太阳能电池中的电荷、激子和离子传输。

Multiphysics simulation of corona discharge induced ionic wind

Ionic wind devices or electrostatic fluid accelerators are becoming of increasing interest as tools for thermal management, in particular for semiconductor devices. In this work, we present a numerical model for predicting the performance of such devices, whose main benefit is the ability to accurately predict the amount of charge injected at the corona electrode. Our multiphysics numerical model consists of a highly nonlinear strongly coupled set of PDEs including the Navier-Stokes equations for fluid flow, Poisson's equation for electrostatic potential, charge continuity and heat transfer eq…