优化MRAM的写入保真度
Optimizing the Write Fidelity of MRAMs
摘要：
磁性随机存取存储器（MRAM）由于其高密度、非易失性和高耐久性而成为一种有前途的存储器技术。然而，实现高存储器保真度会导致显著的写入能量成本，这对于MRAM的大规模部署来说应该减少。在本文中，我们制定了一个优化问题，最大限度地提高存储器的保真度给定的能量约束，并提出了一个双凸优化方法来解决它的基本思想是分配非均匀的写脉冲取决于每个比特位置的重要性。我们考虑的保真度措施是最小均方误差（MSE），我们提出了一个迭代注水算法。虽然迭代算法不能保证全局最优，但我们可以选择一个适当的起点，以指数方式降低MSE并保证快速收敛。对于一个8位访问的字，所提出的算法减少了21倍的MSE。
英文摘要：
Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs significant write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate an optimization problem for maximizing the memory fidelity given energy constraints, and propose a biconvex optimization approach to solve it. The basic idea is to allocate non-uniform write pulses depending on the importance of each bit position. The fidelity measure we consider is minimum mean squared error (MSE), for which we propose an iterative water-filling algorithm. Although the iterative algorithm does not guarantee global optimality, we can choose a proper starting point that decreases the MSE exponentially and guarantees fast convergence. For an 8-bit accessed word, the proposed algorithm reduces the MSE by a factor of 21.
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